Realisation of High-Frequency DRO Oscillators with Mosfet Transistors for Sub-MMWAVE Band

Anotace: In high-frequency electronics, optimizing RF oscillators performance is essential, especially as applications reach into wide frequency bands. This article describes proposed clock generators for UWB sensor systems based on oscillators with dielectric resonator (DRO). Evaluation boards with different sizes of microstrip conductors were developed and tested, based on which new versions of boards were created. Improvements were made to integrate the DRO into a shielded box to ensure minimal external interference. The final designs demonstrated stable operation with low phase noise λ (1 MHz) = -108.805 dBc at fc = 21.732 GHz, sufficient power (3.65 dBm) and low power consumption(56 mW).