Joanna Prazmowska, Kornelia Indykiewicz, Bogdan Paszkiewicz, Regina Paszkiewicz
Proximity Effect in Gate Fabrication Using Photolithography Technique
Číslo: 2/2017
Periodikum: Advances in Electrical and Electronic Engineering
DOI: 10.15598/aeee.v15i2.2024
Klíčová slova: AlGaN/GaN transistors; h-line lithography; proximity effect, Tranzistory AlGaN / GaN; H-line litografie; Blízkost.
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